AO4443 40v p-channel mosfet general description p roduct summary v ds i d (at v gs =-10v) - 6a r ds(on) (at v gs =-10v) < 42m w r ds(on) (at v gs =-4.5v) < 63m w 100% uis tested 100% r g tested symbol v ds the AO4443 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch a nd battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -40v drain-source voltage -40 soic-8 t op view bottom view pin1 g d s v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q j l t a =70c 2 w u nits thermal characteristics parameter typ max mj junction and storage temperature range -55 to 150 c power dissipation b v drain-source voltage -40 gate-source voltage -5 t a =25c t a =70c c ontinuous drain current i d a 2 0 v 20 -6 -40 a maximum junction-to-ambient a d 16 75 pulsed drain current c 3.1 t a =25c a valanche current c 20 p d avalanche energy l=0.1mh c c/w r q j a 24 m aximum junction-to-ambient a 31 59 40 maximum junction-to-lead c/w c/w rev 4: august 2011 www.aosmd.com page 1 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4443 symbol min typ max units bv dss -40 v v ds =-40v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.5 -2 -2.6 v i d(on) 40 a 35 42 t j =125c 53 65 46.5 63 m w g fs 17 s v sd -0.76 -1 v i s -3.5 a c iss 750 940 1175 pf c oss 97 pf c rss 72 pf r g 7 14 21 w q g(10v) 17.3 22 nc qg (4.5v) 8.4 11 q gs 3.2 nc q gd 4.3 nc t d(on) 10.3 ns t 4.3 ns v gs =0v, v ds =-20v, f=1mhz switching parameters v ds =v gs i d =-250 m a v gs =-4.5v, i d =-5a forward transconductance v gs =-10v, i d =-6a reverse transfer capacitance maximum body-diode continuous current m w v = - 10v, v = -20 v, dynamic parameters turn-on delaytime gate resistance v gs =0v, v ds =0v, f=1mhz v ds =-5v, i d =-6a r ds(on) static drain-source on-resistance total gate charge v gs =-10v, v ds =-20v, i d =-6a gate source charge gate drain charge i s =-1a,v gs =0v diode forward voltage input capacitance output capacitance turn-on rise time electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v ds =0v, v gs =20v gate-body leakage current t r 4.3 ns t d(off) 39 ns t f 46.5 ns t rr 17 24 ns q rr 11.5 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =-6a, di/dt=100a/ m s body diode reverse recovery charge body diode reverse recovery time i f =-6a, di/dt=100a/ m s v gs = - 10v, v ds = -20 v, r l =3.35 w , r gen =3 w turn-off delaytime turn-off fall time turn-on rise time a. the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: august 2011 www.aosmd.com page 2 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4443 typical electrical and thermal characteristics 17 5 2 10 0 18 0 1 0 20 30 40 0 1 2 3 4 5 6 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 30 3 5 40 45 50 55 60 65 0 3 6 9 12 15 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1 .2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v g s =-10v i d =-6a v g s =-4.5v i d =-5a 25 c 125 c v d s =-5v v g s =-4.5v 0 1 0 20 30 40 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3.5v -7 v -10v -4v -4.5v -5v v g s =-10v 40 1.0e-05 1 .0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 4 0 60 80 100 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d = -6a 25 c 125 c rev 4: august 2011 www.aosmd.com page 3 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4443 typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 3 6 9 12 15 18 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 00 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 40 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss v d s =-20v i d =-6a 1 1 0 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction - to - t a = 25 c 0.0 0 .1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 10: maximum forward biased safe 10 m s 10s 1ms dc r d s(on) limited t j( max) =150 c t a =25 c 100 m s 10ms figure 11: single pulse power rating junction - to - ambient (note f) figure 10: maximum forward biased safe operating area (note f) 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) d=t o n /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja = 75 c/w single pulse rev 4: august 2011 www.aosmd.com page 4 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4443 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar a r bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d (off) f off d (on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 4: august 2011 www.aosmd.com page 5 of 5 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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